Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe

DS: Dünne Schichten

DS 24: Postersitzung II

DS 24.17: Poster

Dienstag, 8. März 2005, 17:00–19:00, Poster TU B

Composition and thermal stability of thin functional oxidic (Pr, La, Y) and metallic (Ru, Ti) layers on Si and SiC substrates — •Andriy Styervoyedov, Ioanna Paloumpa, and Dieter Schmeisser — Angewandte Physik - Sensorik, BTU Cottbus, Konrad-Wachsmann-Allee 17, 03046 Cottbus, Germany

Thin Pr-, La- and Y- based oxide layers for applications as gate dielectric in metal-oxide-semiconductor (MOS) structures are investigated with x-ray photoelectron spectroscopy. The films with a thickness of around 2nm have been prepared on Si and SiC wafers by various chemical deposition methods based on nitrate solutions. In addition, we report on Ti- and Ru- based metal contacts prepared in the same way. The film composition is analysed and annealing steps in vacuum up to 900^∘C have been applied to test their thermal stability. The interface characteristics, surface composition and thermal stability of MOS functional multilayers have been studied and will be presented.