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DS: Dünne Schichten

DS 24: Postersitzung II

DS 24.4: Poster

Dienstag, 8. März 2005, 17:00–19:00, Poster TU B

Optimisation of MOVPE growth of InN with spectroscopic ellipsometry — •M. Drago, C. Werner, T. Schmidtling, M. Pristovsek, U.W. Pohl, and W. Richter — TU-Berlin, Institut für Festkörperphysik, Hardenbergstr. 36, 10623 Berlin

Because of the poor quality of the available InN layers, fundamental properties of this material (i.e. the value of the bandgap energy) are still under discussion. Consequently, there is a strong demand to improve the InN epitaxial layers. We have grown InN on sapphire (00.1) in MOVPE, studying the dynamics of the processes and the optical properties with in-situ spectroscopic ellipsometry (SE). In this work we report on the effect of substrate preparation, nucleation layer thickness and different growth parameters. Our results led to an improved procedure where the temperature is increased after nucleation and V/III ratio is decreased down to 10000 during growth at 580^∘C. This allows growth rates as high as 350 nm/minute. The samples produced are presently among the best in the MOVPE niveau. The resulting mobility was 600 cm²/Vs and the FWHM for the X-ray diffraction 2-θ scans in the 00.2 reflection was lower than 150 seconds.