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DS: Dünne Schichten
DS 24: Postersitzung II
DS 24.5: Poster
Tuesday, March 8, 2005, 17:00–19:00, Poster TU B
Origin of the optical anisotropy oscillations during the oxidation of Si(001) — •Frank Fuchs, Wolf G. Schmidt, and Friedhelm Bechstedt — Institut für Festkörpertheorie und -optik,
Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, 07743 Jena, Germany
The oxidation of silicon is both of great fundamental and
technological interest. Despite decades of effort, the
microscopic mechanisms of oxide growth are still under consideration.
Recent experiments [1-4] indicate the high potential of
Reflectance Anisotropy Spectroscopy (RAS) for the study of oxide growth
on Si(001), where RAS could represent a powerfull supplement to
conventional
surface characterisation techniques.
Here we present the results of our ab initio study on the origin of the
RAS oszillations measured during oxide growth.
Our results demonstrate the relation of the RAS oscillations to the
layer-by-layer oxidation of Si(001). The major contribution to
RAS is
found to result from the
interface, while the RAS signal from the oxide-overlayer is found to
vanish due to surface disorder. The progression of the local
strain field accompanying the oxygen-insertion into Si-Si bonds at the
interface is identified as the actual origin of the RAS oscillation.
[1] T. Yasuda et al., Phys. Rev. Lett. 87, 037403 (2001).
[2] T. Matsudo et al., J. Appl. Phys. 91, 3637 (2002).
[3] T. Yasuda et al., Phys. Rev. B 67, 195338 (2003).
[4] T. Yasuda et al., Thin Solid Films 455-456, 759 (2004).