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DS: Dünne Schichten

DS 24: Postersitzung II

DS 24.8: Poster

Dienstag, 8. März 2005, 17:00–19:00, Poster TU B

Multichannel RAS – a versatile means for fast in situ-measurements — •Ch. Kaspari, S. Weeke, F. Poser, M. Pristovsek, and W. Richter — Technische Universität Berlin, Institut für Festkörperphysik, Sekr. PN 6-1, Hardenbergstraße 36, D-10623 Berlin

Reflectance anisotropy spectroscopy (RAS) has become an important in situ-technique for the study of epitaxial growth of semiconductor surfaces and interfaces. However, for growth monitoring on a short time scale (order of seconds and below) one is usually restricted to transient measurements at one single photon energy.

We report on a special RAS setup that is designed to measure transients at multiple photon energies simultaneously in the spectral range between 1.4 and 5 eV. A variety of processes in III-V-MOVPE were investigated with this setup, e.g. oxide desorption and quantum dot growth.