Berlin 2005 – wissenschaftliches Programm
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DS: Dünne Schichten
DS 8: Ionen-Festkörper-Wechselwirkung I
DS 8.1: Vortrag
Samstag, 5. März 2005, 15:15–15:30, TU HS107
MD simulations of thermally induced and ion beam induced solid-phase crystallization in silicon — •Konrad Gärtner1 and Brigitte Weber2 — 1Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, 07743 Jena — 2Fraunhofer-Institut für Angewandte Optik und Feinmechanik, 07743 Jena
Classical molecular dynamics (MD) simulations of thermally and ion beam induced solid-phase crystallization at the amorphous-Si/(001)Si interface have been performed using the Stillinger-Weber potential. The simulations were done for two a-Si/(001)Si systems with different sizes (5120 Si atoms and 49152 Si atoms). The evolution of the two systems at different temperatures shows that a realistic stationary interface can be obtained only with the large system. The topological structure of the resulting interface is characterized by extended hip roof structures which explain the large measured interface roughness (about 8 Å). The velocities of the motion of the stationary interface (rates) for the thermally induced and ion beam induced crystallization (and amorphization) are determined and discussed.