Berlin 2005 – scientific programme

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DY: Dynamik und Statistische Physik

DY 34: Poster

DY 34.84: Poster

Monday, March 7, 2005, 15:30–18:00, Poster TU D

Phase-field simulation of pattern formation during GeSi crystal growth — •Wolfram Miller und Igor Rasin — Institut für Kristallzüchtung (IKZ), Max-Born-Str.2, 12489 Berlin

A modified version of the phase-field model of Kim et al. is used for calculating the solidification of binary system GeSi. The phase-field equation is solved by a finite-difference scheme. A recently developed kinetic scheme is used to compute the transport of silicon in the germanium melt. This allows the computation of pattern formation even in cases of low undercooling within reasonable times. We have studied the cellular growth in the regime of crystal growth experiments at the IKZ for different growth velocities and temperature gradients.

[1] Seong Gyoon Kim, Won Tae Kim, and Toshio Suzuki, Phys. Rev. E 60 (1999), 7186