Berlin 2005 – scientific programme
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HL: Halbleiterphysik
HL 13: III-V Halbleiter II
HL 13.3: Talk
Friday, March 4, 2005, 15:30–15:45, TU P-N202
Photoluminescence Measurements on GaAs1−xNx Quantum Wells — •B. Rähmer, F. Poser, M. Pristovsek, and W. Richter — Technische Universität Berlin, Institut für Festkörperphysik, Hardenbergstr. 36, 10623 Berlin
It is well known that the fundamental bandgap energy of GaAs1−xNx shifts into the infrared spectral region with increasing nitrogen content x. This makes GaAs1−xNx an interesting material for light emitting devices with emission wavelengths from 1.3 µm to 1.55 µm . However, the underlying mechanism of the bandgap shift is still not fully understood.
Here we study the temperature dependent photoluminescence (PL) of MOVPE grown 5-fold GaAs1−xNx/GaAs super lattices for samples with x ranging between 1% and 5%. The N content x is determined by XRD and correlated to the PL data.
The annealing behavior was studied for one GaAs1−xNx/GaAs sample with 4% nitrogen. A blue shift of the PL emission with increasing annealing temperature as described in the literature was not observed but the PL intensity shows a significant increase.