HL 13: III-V Halbleiter II
Freitag, 4. März 2005, 15:00–16:30, TU P-N202
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15:00 |
HL 13.1 |
Electronic structure and band alignment of GaIn(N)As/GaAs quantum wells determined by surface photovoltage and electroreflectance measurements — •M. Hetterich, A. Grau, M. Galluppi, L. Geelhaar, and H. Riechert
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15:15 |
HL 13.2 |
Unusual Segregation of Antimony into InP in MOVPE — •Martin Leyer, Stefan Weeke, Frank Brunner, Markus Pristovsek, Markus Weyers, and Wolfgang Richter
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15:30 |
HL 13.3 |
Photoluminescence Measurements on GaAs1−xNx Quantum Wells — •B. Rähmer, F. Poser, M. Pristovsek, and W. Richter
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15:45 |
HL 13.4 |
Exchange reactions of As and N on GaAs surfaces — •R. Ehlert, S.J. Simon, F. Poser, N. Esser, P. Vogt, and W. Richter
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16:00 |
HL 13.5 |
Influence of sapphire nitridation of MOVPE growth of InN — •C. Werner, M. Drago, M. Pristovsek, and W. Richter
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16:15 |
HL 13.6 |
Defect related optical transitions in AlN bulk crystals — •Martin Albrecht, Klaus Irmscher, Matthias Roßberg, Thilo Remmle, Jürgen Wollweber, and Axel Hoffmann
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