Berlin 2005 – scientific programme

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HL: Halbleiterphysik

HL 14: Heterostrukturen

HL 14.2: Talk

Friday, March 4, 2005, 15:15–15:30, TU P-N229

Time-resolved photoluminescence of type-I and type-II (GaIn)As/Ga(NAs) heterostructures — •J. D. Heber, K. Hantke, C. Schlichenmaier, A. Thränhardt, T. Meier, B. Kunert, K. Volz, W. Stolz, S. W. Koch, and W. W. Rühle — FB Physik und WZMW, Philipps-Universität Marburg, Renthof 5, 35032 Marburg

A set of (Ga_0.77In_0.23)As/Ga(N_xAs_1−x) heterostructures is studied by time-resolved photoluminescence. Four samples with nitrogen concentrations from x=0.48% up to x=2.2% are investigated at different temperatures and excitation densities. The experiments clearly show that the heterostructure band offset is type-I for x=0.48% and type-II for x=2.2%. The situation is more complex for x=0.72% and x=1.25%, since these samples are close to the transition from type-I to type-II and since disorder also influences the recombination dynamics. The experimental findings are analyzed using a detailed microscopic theory. The agreement between experiment and theory is very good and confirms that the x=0.72% sample is type-I and the x=1.25% sample is type-II.