Berlin 2005 – wissenschaftliches Programm

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HL: Halbleiterphysik

HL 14: Heterostrukturen

HL 14.5: Vortrag

Freitag, 4. März 2005, 16:00–16:15, TU P-N229

Atomically flat (110) GaAs interfaces by in-situ annealing — •Elisabeth Reinwald, Robert Schuster, Christian Gerl, Hans-Peter Tranitz, and Werner Wegscheider — Universität Regensburg, Institut für Experimentelle und Angewandte Physik, 93040 Regensburg

The growth of (110) GaAs using the cleaved-edge overgrowth method requires low substrate temperatures and high arsenic overpressure. These growth conditions are typically responsible for high surface and interface roughness. An in-situ annealing step reduces the roughness and large atomically flat surfaces can be achieved [1]. The deviation from an integer monolayer thickness results in characteristic islands or pits. The annealing step can be used to improve the quality of two-dimensional electron gases on (110) GaAs. Such high quality samples are necessary for creating a two-dimensional electron gas modulated in two perpendicular directions. In order to achieve this kind of modulation we use a superlattice modulation together with anodic oxidation with an atomic force microscope tip.

[1] M. Yoshita, H. Akiyama, L.N. Pfeiffer, K.W. West, Jpn. J. Appl. Phys. 40, L252 (2001)

This project is supported by the BMBF (01BM918).