Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe

HL: Halbleiterphysik

HL 16: Poster Ia

HL 16.20: Poster

Freitag, 4. März 2005, 16:30–19:00, Poster TU E

Ballistic rectification processes in crossed electron-waveguide devices — •Michael Knop¹, Ulrich Wieser¹, Ulrich Kunze¹, Dirk Reuter², and Andreas D. Wieck² — ¹Lehrstuhl für Werkstoffe und Nanoelektronik, Ruhr-Universität Bochum, Germany — ²Lehrstuhl für Angewandte Festkörperphysik, Ruhr-Universität Bochum, Germany

We investigate ballistic rectification processes in nanoscale four-terminal field effect devices with broken symmetry. The electron-waveguide injection leads are oppositely attached to a 200-400 nm wide and 2.5 µm long central channel which provides voltage probes. The angle between the injection leads and the central channel is varied between 30^∘ and 90^∘. The devices are fabricated by a mix-and-match process combining high-resolution electron-beam and conventional photo lithography from a GaAs/AlGaAs heterostructure. The conductance characteristics of the injection leads show quantized conductance. Dc measurements in three-terminal configuration, one voltage probe remains unused, show ballistic rectification due to different mode population in the injection leads. In the four-terminal configuration we observe a rectification signal arising from the inertia ballistic motion of the injected electrons.