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HL: Halbleiterphysik

HL 16: Poster Ia

HL 16.7: Poster

Freitag, 4. März 2005, 16:30–19:00, Poster TU E

Towards Capture of Optically Induced Spin-Currents in Semiconductor Nanostructures — •Sangam Chatterjee¹, Wolfgang Rühle¹, and Klaus Köhler² — ¹Department of Physics and Material Science Center, Philipps-University Marburg, Renthof 5, 35032 Marburg, Germany — ²Fraunhofer Institute for Applied Solid-State Physics, 79108 Freiburg, Germany

Coherent one and two photon excitation of semiconductors leads to spin-polarized currents due to quantum interference. Pure spin-currents without a net electron current are generated if the correct polarization geometry is chosen. The spin orientation and direction of these currents can be controlled by the relative phase of the two exciting fields [1]. Our goal is to detect these spin currents in an integrated device.

We have designed and grown a semiconductor nanostructure to demonstrate the capture of ballistic electrons in two different GaAs quantum wells. Experimental photoluminescence studies for different excitation and polarization geometries are presented and discussed.

[1] J. Hübner, W.W. Rühle et al., Phys. Rev. Lett. 90, 216601 (2003) and M. Stevens, A. Smirl et al., Phys. Rev. Lett. 90, 136603 (2003)