Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe

HL: Halbleiterphysik

HL 17: Poster Ib

HL 17.20: Poster

Freitag, 4. März 2005, 16:30–19:00, Poster TU F

Direct writing of two-dimensional electron gases by focused ion beam implantation doping of inverted GaAs/AlxGa1-xAs-heterostructures — •Christof Riedesel, Dirk Reuter, and Andreas D. Wieck — Angewandte Festkörperphysik, Ruhr-Universität Bochum, Universtitätsstr. 150, D-44780 Bochum

We use molecular beam epitaxy (MBE) overgrowth of focused ion beam (FIB) implanted AlxGa1-xAs to fabricate laterally patterned two-dimensional electron gases (2DEGs) [1,2]. In this contribution we present directly written 2DEGs with sub-micron resolution. By choosing a line as implantation pattern and thus receiving a narrow lateral doping profile with an approximate width of the FIB-diameter, narrow electronic channels can be fabricated. Due to the additional lateral confinement of the 2D electrons in such a narrow channel the magnetotransport shows characteristic features which can be used to evaluate the electronic width of the channel. So far a minimal electronic channel width of 360 nm has been achieved. Financial support of the German Federal Ministry of Education and Research via grant No. 01BM908/6 is gratefully acknowledged.

[1] D. Reuter, C. Riedesel, P. Schafmeister, C. Meier, and A.D. Wieck, Appl. Phys. Lett. 82 (2003) 481.

[2] C. Riedesel, D. Reuter, and A.D. Wieck, Physica E 21, 592-596 (2004).