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HL: Halbleiterphysik

HL 17: Poster Ib

HL 17.24: Poster

Freitag, 4. März 2005, 16:30–19:00, Poster TU F

Diamagnetic Shift of localized excitons in GaAs/AlGaAs Quantum Wells — •M. Erdmann¹, M. Wenderoth¹, R.G. Ulbrich¹, S. Malzer², and G. Döhler² — ¹IV. Physikalisches Institut der Universität Göttingen,Friedrich-Hund-Platz 1, 37077 Göttingen — ²Institut für technische Physik, Universität Erlangen-Nürnberg, Erwin-Rommel-Straße 1, 91058 Erlangen

We have performed Magneto-Micro-Photoluminescence (µPL) experiments on GaAs/AlGaAs quantum wells. Emission spectra with spectral resolution of 70 µeV were obtained using a scanning µPL microscope with lateral resolution of 500 nm. A magnetic field of up to 12 T was applied perpendicular to the quantum wells. The disorder potential of the quantum well interfaces leads to a localization of excitons [1]. We find that with increasing emission energy the diamagnetic shift of individual localized states increases by approximately a factor of 2. We discuss our results with regard to recent calculations of Grochol and Grosse [2].

[1] A. Zrenner et al., Phys. Rev. Lett. 72 (1994) 3382