Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe

HL: Halbleiterphysik

HL 17: Poster Ib

HL 17.28: Poster

Freitag, 4. März 2005, 16:30–19:00, Poster TU F

Modeling the electrical properties of interfaces obtained via UHV wafer bonding — •Alin Mihai Fecioru, Stephan Senz, and Ulrich Michael Gösele — Max-Planck-Institut für Mikrostrukturphysik, 06120 Halle

Si-Si and Si-GaAs interfaces were obtained by ultrahigh vacuum (UHV) wafer bonding. The electrical properties were characterized by temperature dependent current-voltage (I-V) measurements and deep level transient spectroscopy (DLTS). We compared various models for such interfaces with experimental results. First, the anti-serial Schottky barrier is used to model the band bending at the interfaces, and the proposed mechanism is the thermionic emission over the barrier, which is valid only when the mean free path of the carriers is large compared to the width of the depletion layer. A second approach is based on the drift-diffusion model, which yields analytical results only when the full-depletion approximation is assumed. Since the agreement between the experimental data and the calculated values are generally poor, we suggest an approach where an incomplete trap filling model is implemented into the Poisson equation together with an impact ionization contribution for high electrical fields.