Berlin 2005 – wissenschaftliches Programm

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HL: Halbleiterphysik

HL 17: Poster Ib

HL 17.35: Poster

Freitag, 4. März 2005, 16:30–19:00, Poster TU F

Optical and electronic properties of nitrogen-doped ultrananocrystalline diamond thin films — •Philipp Achatz, Jose-Antonio Garrido, and Martin Stutzmann — Walter Schottky Institut, Technische Universität München, Am Coulombwall, 85748 Garching, Germany

Ultrananocrystalline diamond thin films have recently attracted renewed interest, mainly due to the appearance of a very high n-type conductivity induced by the addition of nitrogen during growth. It has been shown that ultrananocrystalline diamond films can be deposited over large areas with a surface roughness down to 10nm, n-type conductivity up to 200 Ω-1cm-1 , and with electrochemical and mechanical properties very similar to the case of single crystalline diamond films. In this paper, we present our work on the characterization of the electronic, optical and structural properties of N-doped ultrananocrystalline diamond films grown on Si, quartz and diamond substrates. The mechanism of the high conductivity and the change of the electronic structure resulting from the incorporation of nitrogen will be discussed based on Hall effect, temperature dependent conductivity, and photocurrent measurements. Raman and X-ray diffraction experiments have been carried out to asses the structural properties of the ultrananocrystalline diamond films.