Berlin 2005 – wissenschaftliches Programm

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HL: Halbleiterphysik

HL 17: Poster Ib

HL 17.45: Poster

Freitag, 4. März 2005, 16:30–19:00, Poster TU F

SILICON LIGHT EMITTING DIODES PREPARED BY ION IMPLANTATION OF PHOSPHOROUS AND BORON — •Yevgen Yeromenko¹, Tzanimir Arguirov^1,2, Martin Kittler², and Winfried Seifert² — ¹BTU Lehrstuhl Experimentalphysik II — ²IHP/BTU Joint Lab

The further progress in microelectronic technology requires, among others one more efficient and noise free way of transferring signals between the parts within a chip. A solution for substituting the currently used conductor interconnects is looked up in the optics: the use of optical interconnects. One aspect in the way to establish a viable optical communication in a chip is the development of efficient light emitter on silicon basis, compatible with currently used CMOS technology.

Here we report on light emitters, prepared by ion implantation. Boron or phosphorous are implanted in moderately doped n or p type silicon wafers and the wafers are subsequently annealed. In this way p-n junctions are formed. We study the influence of sample preparation conditions (implantation dose and energy, annealing type) over the room temperature silicon band edge luminescence from the diodes.

We observed efficient room temperature electroluminescence by forward biasing the diodes at typical for the microelectronics operating voltages - below 2V. The luminescence shows anomalous temperature behavior - its intensity becomes stronger with increasing the temperature.