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HL: Halbleiterphysik

HL 17: Poster Ib

HL 17.49: Poster

Freitag, 4. März 2005, 16:30–19:00, Poster TU F

MOVPE growth of B_xGa_1−xP alloys on (001) GaP substrates — •Volker Gottschalch¹, Gunnar Leibiger¹, Jens Bauer¹, and Gabi Benndorf² — ¹Universität Leipzig, Institut für Anorganische Chemie, Linnéstraße 3, 04103 Leipzig — ²Universität Leipzig, Institut für Experimentelle Physik II, Linnéstraße 5, 04103 Leipzig

Only a few data are available on the boron incorporation in A^IIIB^V compounds. Epitaxial growth of B_xGa_1−xAs and B_xGa_1−x−yIn_yAs alloys on GaAs have been studied. We have studied the boron incorporation in GaP because of their optoelectronic properties and the potential application to optoelectronic devices. We report on the metal-organic vapour-phase epitaxy growth of B_xGa_1−xP alloys on (001) GaP substrates using the precursors triethylboron, trimethylgallium and phosphine. The mole fraction of Boron in the epitaxial layer was varied from x = 0 to 0.03. The growth behaviour of single layers and strained quantum well structures was studied. The influence of the growth conditions on layer deposition, boron incorporation, interface quality, and optical properties of bulk-like and quantum well structures is discussed and compared with the Nitrogen incorporation in GaP.