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HL: Halbleiterphysik

HL 17: Poster Ib

HL 17.4: Poster

Freitag, 4. März 2005, 16:30–19:00, Poster TU F

Hall effect measurements on ZnO thin films — •Matthias Brandt, Holger von Wenckstern, Susanne Heitsch, Gabriele Benndorf, Holger Hochmuth, Michael Lorenz, and Marius Grundmann — Universität Leipzig, Institut für Experimentelle Physik II, Linnestrasse 5, 04103 Leipzig

We have investigated the free carrier concentration and the Hall mobility of ZnO thin films in a wide temperature range. The thin films are grown by pulsed laser deposition on a-plane sapphire substrates. We have investigated four different kinds of samples: nominally undoped ZnO, nominally undoped ZnO grown on a MgO buffer layer, Al or Ga doped samples, and Al or Ga doped samples deposited in a MgO buffer layer. The dominating scattering mechanisms and the dominating donor levels are determined and discussed. Further we investigated the optical properties of the thin films using photoluminescence measurements. The obtained results are compared to temperature dependent Hall data of state of the art single crystals.