Berlin 2005 – scientific programme

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HL: Halbleiterphysik

HL 17: Poster Ib

HL 17.5: Poster

Friday, March 4, 2005, 16:30–19:00, Poster TU F

Influence of the incorporation of group V elements on the electrical properties of ZnO thin films — •Holger von Wenckstern, Susanne Heitsch, Gabriele Benndorf, Daniel Spemann, Michael Lorenz, and Marius Grundmann — Universität Leipzig, Institut für Experimentelle Physik II, Linnéstrasse 5, 04103 Leipzig

We have grown ZnO thin films by pulsed laser deposition on sapphire substrates. The samples were doped with N or with P in order to investigate the change in electrical conductivity compared to nominally undoped samples. For that we have used ZnO targets containing different amounts of e.g. P₂O₅ or e.g. Zn₃N₂. The electrical properties are related to the content of the group V acceptors. A number of samples is also investigated by photoluminescence measurements and new features in the recombination spectrum are correlated with the incorporation of N or P. The changes of the electrical properties after annealing the thin films at temperatures higher than 700^∘C are also reported.