Berlin 2005 – scientific programme

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HL: Halbleiterphysik

HL 17: Poster Ib

HL 17.64: Poster

Friday, March 4, 2005, 16:30–19:00, Poster TU F

Structural, optical and electrical properties of p-type transparent conducting CuAlO₂ thin films prepared by RF reactive sputtering — •Bin Yang, Bruno K. Meyer, Angelika Polity, Thorsten Krämer, and Baker Farangis — I. Physikalisches Institut, Justus-Liebig-Universität, Heinrich-Buff-Ring 16, 35392 Giessen, Germany

In recent years, p-type transparent conducting oxide compounds based on the delafossite structure have attracted much attention because of their potential in preparing novel transparent p-n junction for device applications. In this work, transparent conducting CuAlO₂ thin films have been deposited by RF reactive sputtering technique on glass and quartz substrates using CuAl alloy target in a mole ratio of 1:1. A study of structural, optical, and electrical properties was performed on the films, varying deposition parameters such as the substrate temperature and the oxygen partial pressure. The crystalline phase in the films was identified to be the delafossite structure by x-ray diffraction. The optical properties, such as the wavelength dependence of the transmittance and the band gap, were determined. The average transmittance is 55% in the wavelength range of 400-1100 nm and the band gap E_g∼3.45 eV. Hall effect measurements confirmed the p-type nature of the semiconductors. The temperature dependence of the electrical conductivity of the CuAlO₂ thin films was measured.