Berlin 2005 – scientific programme
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HL: Halbleiterphysik
HL 17: Poster Ib
HL 17.68: Poster
Friday, March 4, 2005, 16:30–19:00, Poster TU F
Evaluation of active semiconductor structures by combined scanning thermo-elastic microscopy and finite element simulations — •Ralf Meckenstock1, Dirk Dietzel1, Sutharat Chotikaprakhan 1, Jean L.N. Fotsing1, Josef Pelzl1, and Simone Cassette2 — 1Exp. Phys. 3, Solid State Spectroscopy, Ruhr-University Bochum, D-44780 Bochum, Germany — 2Thales Research and Technology France, F-91404 Orsay Cedex, France
The main objections of experimental and theoretical efforts of a common research work are the localization of the heat sources and the determination of the temperature peak rises in the hot region of nano-tailored semiconductor devices. Here we report on combined investigations of hot areas in a high power high electron mobility transistor (HEMT) using a scanning thermo-elastic microscope (SthEM) and finite element (FE) simulations of the problem. The sample was a AlGaN/GaN-HEMT grown on sapphire substrate, with a gold coating for improved thermal management.The thermo-elastic image reveals a hot line adjacent to the gate region as it is predicted by the finite element simulation. A rescaling of the estimated temperature amplitude obtained by the thermo-elastic measurements leads for conditions of the FE-simulations to a maximum temperature of about 200 ∘C in reasonable agreement with the simulation. Work performed in the frame of the EC-project MICROTHERM.