Berlin 2005 – wissenschaftliches Programm

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HL: Halbleiterphysik

HL 2: Symposium ZnO - Rediscovered

HL 2.3: Vortrag

Freitag, 4. März 2005, 11:45–12:15, TU P270

Bound exciton recombinations in ZnO — •Bruno K. Meyer, Joachim Sann, Detlev M. Hofmann, Christian Neumann, and Arndt Zeuner — I. Physikalisches Institut, Justus-Liebig-Universität-Giessen, Heinrich-Buff-Ring 16, D-35392 Giessen, Germany

In order to realize controlled p-type doping in ZnO the role of extrinsic and intrinsic donors have to be clarified. The extrinsic n-type dopants Al, Ga and In are commonly found in bulk ZnO crystals. Also hydrogen acts as a shallow donor, and appears in relevant concentrations in nominally undoped ZnO. The optical properties of excitonic recombinations in bulk, n-type ZnO are investigated by photoluminescence (PL). At liquid helium temperature the neutral donor bound excitons dominate in the PL spectrum. Two electron satellite transitions (TES) of the donor bound excitons allow to determine the donor binding energies ranging from 46 to 73 meV. The H, Al, Ga and In donor bound exciton recombinations are identified based on doping and diffusion experiments, magnetic resonance and using secondary ion mass spectroscopy. The influence of acceptor doping on the band edge recombinations will be discussed.