Berlin 2005 – scientific programme
Parts | Days | Selection | Search | Downloads | Help
HL: Halbleiterphysik
HL 21: Spintronik III
HL 21.7: Talk
Saturday, March 5, 2005, 12:15–12:30, TU P164
An all electrical detection of spin Rabi oscillation in crystalline silicon — •Christoph Boehme and Klaus Lips — Hahn-Meitner-Institut Berlin, Kekuléstr. 5, 12489 Berlin, Germany
Pb centers are paramagnetic bandgap states at the silicon to silicon dioxide interface which can be detected electrically with single spin sensitivity. Here, it is demonstrated, that the coherent spin motion of this defect can also be observed electrically with high sensitivity. The detection setup used is based on the direct measurement of spin-dependent photocurrents. When charge carriers localize at the Pb sites they form spin pairs that are pumped to high triplet densities due to their longer trapping time compared to singlet states. The triplet pairs coherently interconvert to singlets by means of electron spin resonance. This leads to oscillations of the charge carrier recombination rates and thus, by means of a charge measurement, the spin state can be read. The demonstration of this readout is accomplished by induction of a Rabi-oscillation on the localized spins. The sensitivity of this coherent readout experiment reached SNR≈√n/(106spins); (n = shot number).