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HL: Halbleiterphysik

HL 21: Spintronik III

HL 21.8: Vortrag

Samstag, 5. März 2005, 12:30–12:45, TU P164

Anisotropy Analysis of GaMnAs on GaAs (001) and (311)A by Magnetotransport and Ferromagnetic Resonance — •Matthias Reinwald¹, Ursula Wurstbauer¹, Matthias Döppe¹, Christoph Bihler², Hans Huebl², Sebastian Gönnenwein³, Martin Brandt², Dieter Weiss¹, and Werner Wegscheider¹ — ¹Institut für Experimentelle und Angewandte Physik, Universität Regensburg, 93040 Regensburg, Germany — ²Walter Schottky Institut, Technische Universität München, 85748 Garching, Germany — ³Kavli Institute of Nanoscience Delft, Faculty of Applied Sciences, Delft University of Technology, 2628 CJ DELFT, The Netherlands

Ga_(1−x)Mn_xAs layers with manganese content x of about 2% have been grown by molecular beam epitaxy on GaAs (001) and (311)A substrates. Magnetotransport measurements with in-plane magnetic field show planar Hall effect, so that it is possible to study the angular dependence of the switching fields by rotating the sample in the field. In (001) samples, a correlation between these switching fields and the magnetic anisotropy with the easy axis parallel to the surface is observed. (311) oriented samples show a more complicated behaviour of the magnetic anisotropy, which is confirmed by ferromagnetic resonance experiments. The hard axis correlated with a strong uniaxial magnetic anisotropy along growth direction in case of the (001) samples is tilted out of the growth direction for the (311) samples, leading to a different behaviour of the planar Hall effect.

This work is supported by BMBF Verbundprojekt Spinelektronik und Spinoptoelektronik in Halbleitern