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HL: Halbleiterphysik
HL 23: II-VI Halbleiter II
HL 23.3: Vortrag
Samstag, 5. März 2005, 11:15–11:30, TU P-N202
Electron effective mass and transport properties of n-doped Zn1−xMnxSe epilayers studied by infrared reflection spectroscopy — •K. C. Agarwal, B. Daniel, C. Klingshirn, and M. Hetterich — Institut für Angewandte Physik and Center for Functional Nanostructures (CFN), Universität Karlsruhe, D-76131 Karlsruhe, Germany
Zn(Mn)Se is a diluted magnetic II-VI semiconductor material with a variety of potential applications in optoelectronic devices, e.g. light-emitting diodes and blue-green laser diodes as well as optoelectronic spin devices. For a full utilization of these materials, it is vitally important to have a solid knowledge of material parameters like the electron effective mass and transport properties in these materials. In this contribution, we present the results of our studies on the slope electron effective mass as a function of doping concentration in n-doped Zn1−xMnxSe:Cl epilayers (0≤ x≤ 0.13). The doping concentration in our samples was determined using Hall measurements in the van-der-Pauw geometry. The electron-plasma frequency was extracted from experimental reflectivity data by making a Drude-Lorentz type multi-oscillator fit taking into account the effects of free charge carriers in doped semiconductors, background dielectric constant as well as the ZnSe-, MnSe- and GaAs-like phonons. In addition we also discuss the optical mobility and resistivity in these samples calculated from our determined fit parameters.