Berlin 2005 – wissenschaftliches Programm

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HL: Halbleiterphysik

HL 23: II-VI Halbleiter II

HL 23.9: Vortrag

Samstag, 5. März 2005, 12:45–13:00, TU P-N202

Doping of group I acceptors in ZnO — •Joachim Sann, Arndt Zeuner, Niklas Volbers, and Bruno K. Meyer — I. Physikalisches Institut, Justus-Liebig-Universität-Giessen, Heinrich-Buff-Ring 16, D-35392 Giessen, Germany

We report on the optical properties of ZnO bulk crystals subjected to different treatments to study the incorporation of group I acceptors. Salts containing Sodium, Lithium or Potassium were used for diffusion into bulk ZnO at temperatures between 400 and 800 ^∘C. The films were investigated by steady state and temperature-dependent photoluminescence (PL). In the case of Lithium (Na) we were able to introduce acceptors which give rise to a donor acceptor pair band around 3.05 eV. According to previous investigations the acceptor may be a pair defect which compensates the shallow Li (Na) donors but does not lead to p-type conduction. We compare our results with in-situ doped CVD grown ZnO epitaxial films.