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DPG

Berlin 2005 – scientific programme

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HL: Halbleiterphysik

HL 24: Bauelemente

HL 24.3: Talk

Saturday, March 5, 2005, 11:15–11:30, TU P-N229

Fabrication and characterization of a vertical resonant tunneling diode in the sub-100nm range — •Jakob Wensorra1, Mihail Ion Lepsa1, Klaus Michael Indlekofer1, Arno Förster2, and Hans Lüth11Institut für Schichten and Grenzflächen (ISG1) und Center of Nanoelectronic Systems for Information Technology (CNI), Forschungszentrum Jülich GmbH, 52425 Jülich — 2Fachhochschule Aachen, Abteilung Jülich, Physikalische Technik, Ginsterweg 1, 52428 Jülich

With the help of electron beam lithography and using high resolution Hydrogen Silsesquioxan (HSQ) as mask material, vertical GaAs/AlAs resonant tunneling diodes (RTD) with lateral dimensions down to 50nm have been realized. For contacting the nanostructures, a novel non-alloyed ohmic contact on a very thin low-temperature-grown GaAs (LT-GaAs) top layer has been developed. By means of DC electrical measurements, the dependence of the I-V characteristics on the device dimension has been analyzed. Here, the electronic transport properties are strongly influenced by the lateral depletion region, which defines the vertical conductive channel within the device. In the I-V characteristics, a clearly pronounced region of negative differential conductance has been observed at room temperature, down to 50nm lateral dimensions.

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