Berlin 2005 – scientific programme
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HL: Halbleiterphysik
HL 24: Bauelemente
HL 24.4: Talk
Saturday, March 5, 2005, 11:30–11:45, TU P-N229
Investigation of Electrical and Optical Properties of BaxSr1-xO Gate Oxide MIS Structures — •OLIVER KERKER1, JAN ZACHARIAE2, FARRUKH MIRZA1, RÜDIGER FERRETTI1, and KARL HOFMANN1 — 1Institut für Halbleiterbauelemente und Werkstoffe, Universität Hannover, Appelstr.11a, 30167 Hannover — 2Institut für Festkörperphysik, Universität Hannover, Appelstr.2, 30167 Hannover
This investigation focuses on MIS structures with the (amorphous or crystalline) high-k dielectrics BaxSr1-xO. These high-k dielectrics are highly hydrophilic and degrade by the formation of hydroxides. Different metal oxide and nitride films are investigated as diffusion barriers and gate electrodes which are deposited by reactive sputtering and PECVD. The thermodynamic and chemical stability and morphology after RTA treatments of complete MIS capacitors are characterized by electrical measurements like tunneling leakage current (I(V)) and by SEM. Complete MIS gate stacks are analyzed by spectroscopic ellipsometry for the determination of complex dielectric functions, thickness of films, refractive indices and optical band gaps. Diffusion barriers are characterized for qualitative compositional surface analysis by XPS and for band structure determination by EELS.