Berlin 2005 – wissenschaftliches Programm

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HL: Halbleiterphysik

HL 25: Si / Ge

HL 25.7: Vortrag

Samstag, 5. März 2005, 12:15–12:30, TU P-N226

Phosphorous donor wave function in strained silicon layers — •Hans Huebl¹, André Stegner¹, Martin S. Brandt¹, and Günther Vogg² — ¹Walter Schottky Institut, Technische Universität München, München, Germany — ²Fraunhofer Institut - Zuverlässigkeit und Microintegration, München, Germany

The wave function of shallow donors such as phosphorous in silicon can be determined very accurately by electron spin resonance. In particular in the context of quantum computing, the manipulation of the donor wave function currently receives considerable attention. Here, we report on the influence of strain on the hyperfine interaction in P-doped Si. In contrast to previous experiments, where the effects of external strain on bulk Si:P were investigated, we use fully strained thin Si:P layers on virtual SiGe substrates grown by CVD where high Ge contents of up to 30% in the substrate allow much higher strains to be investigated. For detection of the spin resonance in these thin epilayers, electrically detected magnetic resonance is used. Si:P on relaxed Si_0.84Ge_0.16 has a hyperfine interaction of 25 G, which is reduced by 40% from the unstrained case, in excellent agreement with the extrapolation of the data obatined on bulk Si:P.