HL 25: Si / Ge
Samstag, 5. März 2005, 10:45–12:45, TU P-N226
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10:45 |
HL 25.1 |
Grazing-Incidence Diffraction Strain Analysis of a Laterally patterned Si wafer treated by Focused Ge and Au Ion Beam Implantation — •J. Grenzer, L. Bischoff, and U. Pietsch
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11:00 |
HL 25.2 |
Doppelresonantes Raman Spektrum in Germanium — •M. Mohr, M. Machón, J. Maultzsch und C. Thomsen
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11:15 |
HL 25.3 |
Vacancy complexes with oversized impurities in Si and Ge — •K. Schroeder, H. Höhler, N. Atodiresei, R. Zeller, and P. H. Dederichs
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11:30 |
HL 25.4 |
Electronic and optical properties of capped Si and Ge nanocrystallites — •Luis Ramos, Jürgen Furthmüller, and Friedhelm Bechstedt
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11:45 |
HL 25.5 |
Ripple structure of ion beam induced Si wafer — •Ullrich Pietsch, J. Grenzer, S. Hazra, T.K. Chini, and M.K. Sanyal
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12:00 |
HL 25.6 |
X-ray Raman scattering at the Si L-edge of Si and amorphous SiO — •M. Volmer, C. Sternemann, J.A. Soininen, A. Hohl, G. Venko, S. Streit, and M. Tolan
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12:15 |
HL 25.7 |
Phosphorous donor wave function in strained silicon layers — •Hans Huebl, André Stegner, Martin S. Brandt, and Günther Vogg
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12:30 |
HL 25.8 |
Ferromagnetic Mn–doped Ge — •Thomas Vallaitis, Mario Gjukic, Christian Jäger, and Martin S. Brandt
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