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HL: Halbleiterphysik
HL 3: Spintronik I
HL 3.5: Vortrag
Freitag, 4. März 2005, 11:45–12:00, TU P164
First-principles studies of MgxZn1−xO alloys — •J. Henk1, M. Bouhassoune1, A. Ernst1, P. Bruno1, M. Däne2, D. Ködderitzsch2, and W. Hergert2 — 1MPI für Mikrostrukturphysik, Halle/S., Germany — 2Martin-Luther-Universität Halle-Wittenberg, Halle/S., Germany
Recent research on O-based semiconductors (e. g., ZnO, MgO) suggested an enormous potential for applications in optics and electronics. One important parameter in device design is the width of the fundamental bandgap which, for example, determines the conductance of tunneling devices. One method to modify the band gap is alloying (‘bandgap engineering’). We report on a first-principles study of MgxZn1−xO for various concentrations x and crystal structures. The phase transition from the wurtzite (ZnO) to the rock-salt structure (MgO) was found at x = 0.36, i. e., close to the experimental value of xexp = 0.4. The fundamental band gap increases upon alloying of ZnO with Mg. Although its size is underestimated due to the local-density approximation, the trends in experiment are fully reproduced.