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HL: Halbleiterphysik

HL 30: II-VI Halbleiter III

HL 30.3: Vortrag

Samstag, 5. März 2005, 15:30–15:45, TU P164

High reflectivity semiconductor bragg-mirrors for II - VI microcavities — •N. Rousseau, C. Arens, A. Pawlis, D. Schikora, and K. Lischka — Universität Paderborn, Department Physik, Warburger Strasse 100, 33095 Paderborn

ZnSe/ZnMgSe distributed Bragg reflectors in the green spectral range have been grown on GaAs (1 0 0) substrates by molecular beam epitaxy. It has been studied the influence of the number of stacks on the reflectivity and on the roughness for a given concentration of the ZnMgSe alloy (15%). Optical and structural properties were investigated using reflectance, HRXRD, RHEED, and photoluminescence. A calculation based on the transfer matrix model was applied to the design of these II − VI DBRs. ZnSe/ZnMgSe DBRs containing between 13 and 32 stacks of alternated quarter-wavelength layers were obtained. As a result of growth optimization, a maximum reflectance of 81% at 510nm was measured for 32 pairs of ZnSe/Zn(0.85)Mg(0.15)Se.