Berlin 2005 – scientific programme

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HL: Halbleiterphysik

HL 38: Halbleiterlaser II

HL 38.2: Talk

Monday, March 7, 2005, 10:15–10:30, TU P-N201

Study of CdSe ridge waveguide quantum dot laser diodes emitting at 560 nm — •Arne Gust, Matthias Klude, Stephan Figge, and Detlef Hommel — Institute of Solid State Physics, University of Bremen, Otto-Hahn-Allee NW1, D-28359 Bremen, Germany

Lasing of CdSe quantum dot laser diodes at room-temperature around a wavelength of 560 nm in pulsed-mode was reported by our group. The LD structure has a separate confinement structure like common quantum well lasers. The active region consists of a fivefold stack containing nominally 1.9 monolayer CdSe per sheet separated by 3.5 nm ZnSSe spacer.

Electro-optical characteristics of different ridge and planar CdSe quantum dot laser diodes were compared. A reduction of the threshold current density by a factor of 4.7 for the ridge structure was obtained. This drastic change has to be associated to the reduction of current spreading inside the LDs. Furthermore, a significant slower degradation of CdSe quantum dot structures compared to common ZnSe-based quantum well structures was observed. Under pulsed condition in LED mode the quantum dot laser exhibits an operating time of 3200 h.

[1] M. Klude et al., Electron. Lett. 37, 1119 (2001).