Berlin 2005 – wissenschaftliches Programm
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HL: Halbleiterphysik
HL 38: Halbleiterlaser II
HL 38.6: Vortrag
Montag, 7. März 2005, 11:15–11:30, TU P-N201
Study of homogeneity of local tilt distribution in thin film disk laser devices by means of spatially resolved white beam x-ray diffraction — •U. Zeimer1, J. Grenzer2,3, D. Korn2, S. Döring2, M. Zorn1, and U. Pietsch2 — 1Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin — 2Institut für Physik, Universität Potsdam, Am Neuen Palais 10, 14415 Posdam — 3Forschungszentrum Rossendorf, Bautzner Landstraße 128, 01328 Dresden
Optically pumped semiconductor disc laser devices (SCDLs) consist of an AlAs/GaAs- Bragg grating with an InGaAs/InGaP multilayer stack on top as the active medium.
To study the homogeneity of the strain induced local tilt distribution of an SCDL device we have set up an experiment at the BESSY EDR beamline using an horizontal reflection geometry. The sample was mounted on a heatable sample holder. The (004) diffracted intensity was monitored by a CCD camera. First we have taken a topograph of the whole sample to identify the tilted regions. The tilted regions were studied in detail by scanning the sample mechanically through the x-ray beam with a footprint of 130 x 100 µ m2 .
A computer program was developed to track the individual diffracted spot position relatively to an average one and to determine its intensity and halfwidth. From these data local tilts and lattice parameters can be determined.