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HL: Halbleiterphysik
HL 38: Halbleiterlaser II
HL 38.7: Vortrag
Montag, 7. März 2005, 11:30–11:45, TU P-N201
Degradation experiments of blue-violet laser diodes grown on SiC and GaN substrates — •M. Furitsch, A. Avramescu, A. Miler, S. Miller, A. Leber, C. Rumbolz, G. Brüderl, A. Lell, and V. Härle — OSRAM Opto Semiconductors GmbH, Wernerwerkstr. 2, 93049 Regensburg
GaN-based semiconductor laser diodes emitting around 405 nm are particularly interesting for storage systems with high capacity for post dvd applications and for high resolution industrial printing.
We developed edge emitting blue-violet laser diodes on SiC substrates, taking advantage of the very good electronically and thermally conductivity of SiC compared to sapphire used by other groups.
Our lasers on SiC substrate exhibit defect densities of 109 cm−2 and lifetimes of 120 h and 310 h at Popt = 10 mW and 1 mW, respectively are demonstrated.
With GaN substrates now available, blue-violet laser diodes were grown using a slightly adapted epitaxial laser structure. Homo epitaxial growth on the new substrate shows improved laser parameters compared to hetero epitaxy on SiC or sapphire substrates.
We realized lasers on GaN substrate with considerably decreased defect densities of <107 cm−2 and we achieved lifetimes of several hundred hours at Popt = 10 mW. We show that due to the reduced defect density, less nonradiative recombination centers are generated and the lifetime increases.