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HL: Halbleiterphysik

HL 4: Quantenpunkte und -dr
ähte: Optische Eigenschaften I

HL 4.1: Vortrag

Freitag, 4. März 2005, 10:45–11:00, TU P-N201

Influence of well width fluctuations on the binding energy of excitons, charged excitons and biexcitons in GaAs-based quantum wells — •A. Filinov¹, M. Bonitz¹, C. Riva², F. Peeters², Y. Lozovik³, A. Bracker⁴, and D. Gammon⁴ — ¹Institute for Theoretical Physics and Astrophysics, Christian-Albrechts-University Kiel, 24098 Kiel — ²Departement Fysica, Universiteit Antwerpen, Universiteitsplein 1, B-2610 Antwerpen, Belgium — ³Institute of Spectroscopy RAS, Moscow region, 142190 Troitsk, Russia — ⁴Naval Research Laboratory, Washington DC 20375, USA

The binding energies of electron-hole bound states in quantum wells (QWs) are higher than in bulk, because of the enhanced Coulomb interaction between confined carriers. Besides, there is an active discussion about the influence of disorder (due to the surface defects or charged donors). In the present talk we present theoretical results obtained from first principle Path Integral Monte Carlo simulations. In particular, the influence of quantum well-width fluctuations on the binding energy of excitons, trions and biexcitons in GaAs/Al_xGa_1−xAs and ZnSe based quantum wells and dots (QD) is analyzed in detail. The results show good quantitative agreement with available experimental data [1], including recent measurements of localized trions in ensemble and individual QDs [2].

[1] A.V. Filinov, C. Riva, F.M. Peeters, Yu.E. Lozovik, and M. Bonitz, Phys. Rev. B 70, 35323 (2004); [2] A.S. Bracker, E.A. Stinaff, D. Gammon, A.V. Filinov, et. al., submitted to Phys. Rev. B 2004.