HL 43: GaN: Pr
äparation und Charakterisierung II
Montag, 7. März 2005, 15:00–16:45, TU P164
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15:00 |
HL 43.1 |
Segregation von Dotieratomen in GaN — •M. Siebert, Th. Schmidt, J. I. Flege, S. Gangopadhyay, A. Pretorius, S. Einfeldt, S. Figge, D. Hommel und J. Falta
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15:15 |
HL 43.2 |
Optical and magnetic properties of rare earth implanted AlN — •Gregor Öhl, U. Vetter, and H. Hofsäss
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15:30 |
HL 43.3 |
MOCVD-grown GaMnN epilayers and nanostructures — •M. Strassburg, M.H. Kane, A. Asghar, Ch. Hums, J. Senawiratne, M. Alevli, N. Dietz, C.J. Summers, I.T. Ferguson, U. Haboeck, A. Hoffmann, D. Azamat, and W. Gehlhoff
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15:45 |
HL 43.4 |
Selection rules for optical transitions of wurtzite InN — •P. Schley, R. Goldhahn, G. Gobsch, V. Cimalla, O. Ambacher, C. Cobet, N. Esser, J. Furthmüller, F. Bechstedt, H. Lu, and W.J. Schaff
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16:00 |
HL 43.5 |
MD-simulations of high pressure synthesis of single crystalline GaN — •Karsten Albe und Paul Erhart
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16:15 |
HL 43.6 |
Determination of the 2DEG density of an AlGaN/GaN HEMT by electroreflectance spectroscopy — •A.T. Winzer, R. Goldhahn, G. Gobsch, A. Link, M. Eickhoff, U. Rossow, D. Fuhrmann, and A. Hangleiter
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16:30 |
HL 43.7 |
Characterization of epitaxially laterally overgrown GaN structures by micrometer-resolved X-ray Rocking Curve Imaging — •Daniel Lübbert, Tilo Baumbach, Petr Mikulik, Petra Pernot, Lukas Helfen, Stacia Keller, and Steven DenBaars
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