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HL: Halbleiterphysik

HL 44: II-VI Halbleiter IV

HL 44.7: Vortrag

Montag, 7. März 2005, 16:30–16:45, TU P-N201

Hybrid epitaxial-colloidal semiconductor nanostructures — •C. Arens¹, N. Rousseau¹, D. Schikora¹, K. Lischka¹, O. Schöps², U. Woggon², M. V. Artemyev³, E. Hertz⁴, and D. Gerthsen⁵ — ¹Universität Paderborn, Department Physik, Warburger Strasse 100, 33095 Paderborn — ²Universität Dortmund — ³Belarussian State University, Minsk — ⁴Cornell University, Ithaca, NY — ⁵Universität Karlsruhe

Using the well establish MBE process, we introduced for the first time colloidal nanocrystalls into monocrystaline semiconductor layer. CdSe/ZnS nanodots and nanorods (R≈3nm) on a ZnSe surface are capped by thin (d≈R) and thick (d>R) MBE-grown ZnSe layers. With HRTEM pictures we show the epitaxial link of the wet chemically prepared semiconductor nanocrystals to the crystal lattice of the ZnSe buffer and the MBE grown cap layer. In- and ex- situ characterisation of the samples (RHEED, HRXRD) are showing the ZnSe cap layer of high crystalinity. After the growth of the cap layer the dots have still their shape and emission spectrum. The results demonstrate that our method allows varying the dot density in a wider range than Stranski-Krastanov growth and allows the incorporation of dots with different emission wavelength in the host material.