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HL: Halbleiterphysik

HL 50: Nanodr
ähte

HL 50.11: Vortrag

Dienstag, 8. März 2005, 13:15–13:30, TU P-N201

Electrical Transport in GaN-whiskers — •Raffaella Calarco¹, Ralph Meijers¹, Thomas Richter¹, Ali Irfan Aykanat¹, Toma Stoica^1,2, Michel Marso¹, and Hans Lüth¹ — ¹Institute of Thin Films and Interfaces (ISG1) and CNI - Centre of Nanoelectronic Systems for Information Technology, Research Center Jülich, 52425 Jülich, Germany — ²INCDFM, Magurele, POB Mg7, Bucharest, Romania

Among different types of nanostructures, semiconductor nanowires and nanotubes are extremely interesting as building blocks for nanoelectronics, due to their suitability for fabricating both nanoscale devices and interconnects. GaN whiskers are reproducibly grown by plasma assisted molecular beam epitaxy on Si(111). The nanocolumns density and diameter are controlled by means of the III/V ratio. The nanocolumns grow parallel to the [111] direction of the Si substrate. The whiskers have been released from the Si(111) substrate and deposited on a Si(100) host substrate covered with a layer of 400nm silicondioxide, finger shaped electrical leads (Ti/Au) are subsequently patterned on it. The electrical behavior of metal semiconductor metal, MSM Schottky barrier photodiode nanostructures is analyzed by means of current voltage measurements with and without UV illumination. The influence of the whisker diameter on the electrical properties has been analysed.