Berlin 2005 – scientific programme
Parts | Days | Selection | Search | Downloads | Help
HL: Halbleiterphysik
HL 50: Nanodr
ähte
HL 50.1: Talk
Tuesday, March 8, 2005, 10:45–11:00, TU P-N201
Template-directed fabrication of periodic ZnO nanowire arrays and the electrical characterizations by SEM nanomanipulator — •Hongjin Fan1, Frank Fleischer1, Woo Lee1, Kornelius Nielsch1, Margit Zacharias1, Armin Dadgar2, and Alois Krost2 — 1Max Planck Institute of Microstructure Physics, Halle (Saale) — 2Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg
We report the successful fabrication of periodical arrays of single-crystalline ZnO nanowire arrays by combining substrate nanopatterning and catalyst-directed epitaxial growth. First, ordered arrays of Au nanodots were obtained by using metal nanohole membranes as shadow mask for Au deposition. This novel type of shadow mask was obtained from an electrochemical duplication process of anodic porous alumina. Subsequent vapor-phase growth resulted in vertically-aligned and hexagonal-arranged ZnO nanowires on GaN/Si substrates. The Au nanodots served as both catalyst and site-specific template for the growth of ZnO nanowires. As the size (30 to 250 nm) of the Au nanodots is tunable by choosing different masks for the Au deposition, the resulting ZnO wires are adjustable in their diameters. For the electrical characterizations, the ZnO nanowires were transferred to an oxide-coated Si substrate. A SEM-based nanomanipulator system, in which two independent sharp needles serve as electrodes, was employed to measure the I-V characteristics of individual ZnO nanowire. Results on this will be shown in detail.