Berlin 2005 – scientific programme

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HL: Halbleiterphysik

HL 53: Transport im hohen Magnetfeld/Quanten-Hall-Effekt

HL 53.5: Talk

Tuesday, March 8, 2005, 16:00–16:15, TU P270

Spin-polarized Edge-States of Quantum Hall Systems on Silicon Basis — •Carsten Kentsch, Wolfgang Henschel, and Dieter P. Kern — Institut für Angewandte Physik, Auf der Morgenstelle 10, 72076 Tübingen

Spin-polarized electrons exist in the edge-states of two-dimensional electron gases (2DEG) at high magnetic fields. They can be used to study the scattering between the spin-states by measuring the electric current. Recently 2DEG-systems in silicon have attracted attention as the main isotope of silicon has no nuclear spin. This means that the probability of spin scattering of the electrons with the base material is much lower than e.g. in GaAs based systems. As a consequence the life times of the spin-polarized electrons are expected to be longer. They can be used for the detection of nuclear spin states of specifically implanted phosphorus atoms which are suitable as quantum bits in quantum computers.

Here Hallbar structures on the basis of MOS-transistors with chromium split-gates below a Ti/Al topgate were fabricated to determine possible electron transfer between edge states. They were characterized at magnetic field strengths of up to 8 Tesla and a temperature of 1.5 Kelvin.