Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe

HL: Halbleiterphysik

HL 56: Photovoltaik I

HL 56.2: Vortrag

Dienstag, 8. März 2005, 15:15–15:30, TU P-N202

Effect of Zn and Mg doping on the electronic properties of CuInS2 thin films and solar cells — •Tobias Enzenhofer, Thomas Unold, Roland Scheer, and Hans-Werner Schock — Hahn-Meitner-Institut Berlin, Glienicker Str. 100, D-14109 Berlin

Solar cells based on CuInS2 still suffer from Voc limitation compared to the theoretically achievable value as expected from the optical band gap of 1.5 eV. Open circuit voltage can be significantly enhanced from about 700 mV to more than 800 mV via controlled doping by Zinc or Magnesium, whereas the efficiency remains mostly constant. The increase of the open circuit voltage occurs in spite of an extended red response. In order to investigate this phenomenon we used on the one hand well-known standard tools to perform the basic characterisation of photovoltaic cells (I/U and quantum efficiency (QE) measurements). On the other hand we applied photoluminescence spectroscopy (PL) to analyse the defect structure of doped CuInS2. By combining electrical and photoluminescence analyses we evaluate the influence of doping on the device properties, i.e. the quality of the CuInS2-absorber layers and the ZnO-CdS-CuInS2 heterostructure.