Berlin 2005 – scientific programme

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HL: Halbleiterphysik

HL 57: Poster IIa

HL 57.29: Poster

Tuesday, March 8, 2005, 16:30–19:00, Poster TU E

Spin flip Raman studies on CdSe/ZnSe quantum dots — •M. Wisniewski, M. Lentze, T. Slobodskyy, G. Astakhov, and J. Geurts — Physikalisches Institut der Universität Würzburg, EP III, Am Hubland, D-97074 Würzburg

The high potential of CdSe quantum dots is well known since several years. They are a possible candidate for optical and electrical applications like laser diodes in the green and blue spectral range. To get a better understanding of their properties we made an analysis by optical measurements e.g. photoluminescence, photoluminescence excitation and spin flip Raman spectroscopy under resonant excitation. Our samples contained 1 Monolayer CdSe embedded in a ZnSe matrix. Photoluminescence measurements were used to analyse excitonic transitions, and spin flip Raman spectroscopy for detection of the effective g-factors of dots and matrix. By tuning the incident photon energy, we exploited the specific ability of resonant Raman scattering to focus the specific sensitivity either on the CdSe dots (E_res=2.65 eV) or on the ZnSe matrix (E_res=2.80 eV). For analyzing the dots we utilize the resonance from a dark exciton whose energy is close to the photoluminescence peak of CdSe.