Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe
HL: Halbleiterphysik
HL 57: Poster IIa
HL 57.2: Poster
Dienstag, 8. März 2005, 16:30–19:00, Poster TU E
Fabrication and characterisation of nanoscale p-type organic field-effect transistors — •D. V. Pham1, C. Bock1, U. Kunze1, D. Käfer2, G. Witte2, and CH. Wöll2 — 1Lehrstuhl für Werkstoffe und Nanoelektronik, Ruhr-Universität Bochum, D-44780 — 2Lehrstuhl für Physikalische Chemie I, Ruhr-Universität Bochum, D-44780
Shifting the channel length L of an organic field-effect transistor (OFET) from micrometer scale structures to nanometer scale a lower driving voltage and an improved cutoff frequency is expected. However, in a bottom-contact structure the ordering of the organic film depends on the channel length and on the growth temperature. We use electron-beam-lithography and lift-off technique to deposit nanoscale Ti/Au electrodes on thermally n-type oxidized silicon (d = 40 nm). The channel length was varied from 5 µm to 100 nm. On top of the electrodes a 60 - 120 nm pentacene film is grown by organic molecular beam epitaxy. We study the correlation of the morphology of the organic film in the active region for different growth temperatures and the output and transfer characteristics of the OFET. Two-terminal and four-terminal measurements enable to eliminate the contact resistance, which becomes more and more important for short channel length. Rubrene is also a promising candidate for high mobility OFETs. Therefore analogue investigations are done on rubrene field-effect structures.