Berlin 2005 – wissenschaftliches Programm
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HL: Halbleiterphysik
HL 57: Poster IIa
HL 57.4: Poster
Dienstag, 8. März 2005, 16:30–19:00, Poster TU E
Combined Raman Spectroscopy and Electrical Characterization of Pentacene Based Organic Field Effect Transistors — •B.A. Paez1, G. Salvan1, L. Mancera1, R. Scholz1, C. Pannemann2, U. Hilleringmann2, and D.R.T. Zahn1 — 1Institut für Physik, Technische Universität Chemnitz, Chemnitz, Germany — 2Universität Paderborn, Paderborn, Germany
Pentacene organic field effect transistors with a channel geometry of 16 µm width, 100 µm length, 30 nm active layer, and a dielectric thickness of 150 nm (SiO2), were characterized by Raman spectroscopy and current-voltage (IV) measurements.
In the Raman measurements a change in band intensities is observed upon applying a gate voltage, but no shifts in the phonon positions were observed within the resolution of the set-up (0.7 cm−1). The results indicate a morphological change of the active layer induced by the gate field.
The current-voltage (IV) characteristics were measured in darkness and under illumination with monochromatic laser light. The results reveal an increase in the drain current upon illumination with a maximum at 2.54 eV photon energy. The dependence of the current-voltage (IV) characteristics on the photon energy was fitted to a modified OFET model allowing for ambipolar charge transport.