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16:30 |
HL 57.1 |
Modellierung des elektrischen Verhaltens organischer Feldeffekt-Transistoren — •Christoph Pannemann, Thomas Diekmann und Ulrich Hilleringmann
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16:30 |
HL 57.2 |
Fabrication and characterisation of nanoscale p-type organic field-effect transistors — •D. V. Pham, C. Bock, U. Kunze, D. Käfer, G. Witte, and CH. Wöll
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16:30 |
HL 57.3 |
Density of Occupied States in Layers of DNA Bases on H-passivated Si(111) — •S. Seifert, G. Gavrila, S.D. Silaghi und D.R.T. Zahn
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16:30 |
HL 57.4 |
Combined Raman Spectroscopy and Electrical Characterization of Pentacene Based Organic Field Effect Transistors — •B.A. Paez, G. Salvan, L. Mancera, R. Scholz, C. Pannemann, U. Hilleringmann, and D.R.T. Zahn
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16:30 |
HL 57.5 |
Luminescence Quenching experiments in Thin Films of PTCDA and MePTCDI, — •André Holzhey, Karl Leo und Michael Hoffmann
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16:30 |
HL 57.6 |
Dynamic behaviour and scaling properties of OFETs with channel lengths between 50 µ m and 100 nm — •Jörg Seekamp, Tobias Muck, Arne Hoppe, Torsten Balster, and Veit Wagner
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16:30 |
HL 57.7 |
Determination of hole mobility and lifetime in bulk heterojunction solar cells by photoinduced absorption spectroscopy — •Stefan Voigt, Uladzimir Zhokhavets, Gerhard Gobsch, Maher Al-Ibrahim, Oliver Ambacher und Steffi Sensfuss
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16:30 |
HL 57.8 |
Correlation effects in dense mass-asymmetric electron-hole plasmas — •Michael Bonitz, Vladimir Filinov, Vladimir Fortov, Pavel Levashov, and Holger Fehske
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16:30 |
HL 57.9 |
Thermoelectric Properties of Disordered Systems — •A. Croy, R. A. Römer, A. MacKinnon, and M. Schreiber
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16:30 |
HL 57.10 |
Anomalously localized states in the 3D Anderson model of localization — •Philipp Cain and Michael Schreiber
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16:30 |
HL 57.11 |
Crystal structures and electronic properties of (A3N)E (A = Ca, Sr, Ba; E = Sb, Bi) — •Miriam Schmitt, Vivien Petzold, Diana Clausnitzer, Waltraut Wustmann, Clemens Räder, Ralf Kliemt, Ulf Lorenz, and Helge Rosner
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16:30 |
HL 57.12 |
Magnetic Freeze-Out in a Double-Barrier Resonant-Tunneling device — •Jens Könemann and R. J. Haug
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16:30 |
HL 57.13 |
Optical properties and ion-damage problems of nano-fabricated GaN structures using focused-ion-beam etching — •H. Lohmeyer, K. Sebald, J. Gutowski, R. Kröger, J. Dennemarck, and D. Hommel
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16:30 |
HL 57.14 |
Strukturierung von SiC und GaN und laterales überwachsen mit GaN/AlxGa1−xN — •B. Postels, N. Riedel, D. Fuhrmann, U. Rossow und A. Hangleiter
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16:30 |
HL 57.15 |
Einfluss der Nukleation auf GaN/AlGaN SQW-Strukturen und deren Alterung — •T. Retzlaff, D. Fuhrmann, N. Riedel, U. Rossow, G. Ade, P. Hinze und A. Hangleiter
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16:30 |
HL 57.16 |
Elektrische Feldabhängigkeit der Photolumineszenzspektren in InGaN/GaN Heterostrukturen — •Harald Braun, Nikolaus Gmeinwieser, Ulrich T. Schwarz, Werner Wegscheider, Elmar Baur, Georg Brüderl, Alfred Lell und Volker Härle
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16:30 |
HL 57.17 |
Investigation of electronic properties of AlGaN/GaN heterostructures using modulation spectroscopy — •A.T. Winzer, R. Goldhahn, G. Gobsch, A. Dadgar, A. Krtschil, H. Witte, A. Krost, O. Weidemann, and M. Eickhoff
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16:30 |
HL 57.18 |
MOVPE Wachstum von AlN auf GaN — •Fabian Schulze, Jürgen Bläsing, Armin Dadgar, Thomas Hempel, Anette Diez, Alois Krost und Jürgen Christen
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16:30 |
HL 57.19 |
Quantenpunktlaser auf InP für den 1.9 µm Wellenlängenbereich — •Andre Somers, Wolfgang Kaiser, Johann Peter Reithmaier und Alfred Forchel
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16:30 |
HL 57.20 |
Properties of quantum-cascade lasers with metallic mirror coatings and metallic distributed feedback gratings in the 10 µm spectral range — •S. Höfling, J. Seufert, M. Fischer, J. Koeth, P. Eugster, J.P. Reithmaier, and A. Forchel
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16:30 |
HL 57.21 |
Population inversion in GaAs/Al0.33Ga0.67As and GaAs/ Al0.45Ga0.55As quantum-cascade structures — •L. Schrottke, S. L. Lu, R. Hey, M. Giehler, H. Kostial, and H. T. Grahn
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16:30 |
HL 57.22 |
Modification of Oscillator Strength in Self-Assembled QDs Using a Laterally Applied Electric Field — •Ruth Oulton, Matthias Schwab, Cedric Bardot, Manfred Bayer, Viktorina Stavarache, Dirk Reuter, and Andreas Wieck
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16:30 |
HL 57.23 |
Quantenpunkte in periodischen Magnetfeldern — •Daniel Buchholz und Peter Schmelcher
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16:30 |
HL 57.24 |
Optische Eigenschaften und Modifikation von II - VI Halbleiter Nanobänder — •Daniel Stichtenoth, Daniel Schwen, Sven Müller, Christine Borchers und Carsten Ronning
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16:30 |
HL 57.25 |
Kontrolle der Exziton-Dekohärenz durch Anregung mit einer Pulsfolge — •Annette Krügel, Paweł Machnikowski, Vollrath Martin Axt und Tilmann Kuhn
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16:30 |
HL 57.26 |
High resolution photocurrent-spectroscopy of a single quantum dot — •Patrick Ester, Stefan Stufler, Artur Zrenner und Max Bichler
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16:30 |
HL 57.27 |
Lumineszenz- und Ladungsträgerdynamik in Halbleiter-Quantenpunkten — •Timo Aschenbrenner, Jan Wiersig, Frank Jahnke und Detlef Hommel
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16:30 |
HL 57.28 |
Quantum Optical Studies of Single InP/GaInP Quantum Dots — •Gareth Beirne, Peter Michler, and Heinz Schweizer
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16:30 |
HL 57.29 |
Spin flip Raman studies on CdSe/ZnSe quantum dots — •M. Wisniewski, M. Lentze, T. Slobodskyy, G. Astakhov, and J. Geurts
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16:30 |
HL 57.30 |
Theory of Acoustic Phonons in Semiconductor Nanostructures: Continuum versus Microscopic Description — •Milana Michaljowa, Frank Grosse, and Roland Zimmermann
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