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Berlin 2005 – wissenschaftliches Programm

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HL: Halbleiterphysik

HL 58: Poster IIb

Dienstag, 8. März 2005, 16:30–19:00, Poster TU F

16:30 HL 58.1 Two-particle correlations in crystalline systems — •K. Morawetz, E. P. Nakhmedov, B. Schmidt, M. Schreiber, and C. Radehaus
16:30 HL 58.2 Magnetotransport measurements on GaAs/AlGaAs quantum rings — •A. Mühle, R. J. Haug, W. Wegscheider, and M. Bichler
16:30 HL 58.3 Noise measurements of vertical coupled InAs quantum dots — •P. Barthold, N. Maire, F. Hohls, A. Nauen, R. J. Haug, K. Pierz, and T. Bryllert
16:30 HL 58.4 Wave-function mixing in tunnel-coupled quantum point contacts — •G. Apetrii, U. Kunze, D. Schuh, and G. Abstreiter
16:30 HL 58.5 Conductance anomalies in a quantum point contact — •D.J. Schefzyk, M. Fleischer, S. Jauerneck, D.A. Wharam, D.A. Ritchie, and M. Pepper
16:30 HL 58.6 Transport spectroscopy of quantum point contacts — •F. Hohls, A. C. Graham, M. Pepper, and D. A. Ritchie
16:30 HL 58.7 Optical properties of phase change materials for optical and electronic data storage with ab initio methods — •Wojciech Wełnic, Silvana Botti, Lucia Reining, and Matthias Wuttig
16:30 HL 58.8 Interferometric cantilever magnetometer for de Haas-van Alphen effect studies — •N. Ruhe, J.I. Springborn, Ch. Heyn, D. Heitmann, and D. Grundler
16:30 HL 58.9 THz-Photoleitung an HgTe/HgCdTe-Quanten-Hall-Detektoren — •R. Bonk, C. Stellmach, C. Becker, V. Hock, G. Hein und G. Nachtwei
16:30 HL 58.10 Magnetotransport zur Charakterisierung von AlGaN/GaN-Heterostrukturen — •K. Knese, F. Vogt, N. Riedel, U. Rossow, C. Stellmach und G. Nachtwei
16:30 HL 58.11 Echtzeitmessung der Relaxation des Photosignals von Quanten-Hall-Terahertz-Detektoren in Corbino-Geometrie — •C. Stellmach, Yu. Vasilyev, A. Hirsch, G. Hein und G. Nachtwei
16:30 HL 58.12 Spin-Flip Excitations and Composite Fermions — •G. Meissner and U. Schmitt
16:30 HL 58.13 Measurements of the electrical excitation of QH-devices in the real time domain — •G. Vasile, C. Stellmach, and G. Nachtwei
16:30 HL 58.14 Nonchiral Edge States and the Chiral Metal Insulator Transition — •Stefan Kettemann, Alexander Struck, Bernhard Kramer, and Tomi Ohtsuki
16:30 HL 58.15 Transition between incompressible states of different spin polarization: a half-polarized ground state? — •Karel Výborný and Daniela Pfannkuche
16:30 HL 58.16 Composite fermions in disordered systems — •Christian Müller and Daniela Pfannkuche
16:30 HL 58.17 Interactions at the Integer Quantum Hall Transition — •Christoph Sohrmann and Rudolf A. Römer
16:30 HL 58.18 Storing of arbitrary light pulses in resonant 1D photonic crystals — •Martin Schaarschmidt, Jens Förstner und Andreas Knorr
16:30 HL 58.19 Resonance Fluorescence of Semiconductor Quantum Dots: Signatures of the Electron-Phonon Interaction — •Kwang Jun Ahn, Jens Förstner, and Andreas Knorr
16:30 HL 58.20 Aharonov-Anandan phase and the quasistationarity of driven quantum systems — •Alex Matos-Abiague and Jamal Berakdar
16:30 HL 58.21 Spontaneous Emission in Photonic Crystals: Experiment vs. Calculation — •Michael Barth and Frank Cichos
16:30 HL 58.22 Nanophotonic Applications of Silicon Carbide — •Bettina Friedel and Siegmund Greulich-Weber
16:30 HL 58.23 Photonic Crystal Microwave Resonators for Magnetic Resonance Applications — •A. von Rhein, E. von Rhein, M. Wanjek, and S. Greulich-Weber
16:30 HL 58.24 II-VI/III-V semiconductor optical cavities fabricated by chemical etching, selective growth or FIB — •J. Lupaca-Schomber, B. Daniel, M. Hetterich, D. Tröndle, H. Kalt, F. Perez-Willard, J. Hawecker, and D. Gerthsen
16:30 HL 58.25 Control of colloidal crystal growth by external fields — •E. von Rhein, O. Gudi, and S. Greulich-Weber
16:30 HL 58.26 Fabrication of templates and 3D nanostructuring of positive photoresists — •Sven Passinger, Carsten Reinhardt, and Boris Chichkov
16:30 HL 58.27 Photoprocessable polymer opals — •Birger Lange and Rudolf Zentel
16:30 HL 58.28 Active and passive doped microstructured and photonic crystal fibres: — •Jens Kobelke, Johannes Kirchhof, Kirsten Gerth, Kay Schuster, Klaus Mörl, Claudia Aichele, and Hartmut Bartelt
16:30 HL 58.29 Realisation of a high efficiency gas sensing device — •Daniel Pergande, Torsten M. Geppert, Andreas von Rhein, Stefan L. Schweizer, Ralf B. Wehrspohn, Thomas Beyer, Iliyana Hinkov, and Armin Lambrecht
16:30 HL 58.30 Focusing microwaves with a concave lens based on a 2D photonic crystal — •E. Foca, S. Frey, F. Daschner, V.V. Sergentu, J. Carstensen, R. Knöchel, I.M. Tiginyanu und H. Föll
16:30 HL 58.31 Selective Thermal Emitters in 2D Photonic Crystals — •B. Gesemann, M. Milbradt, A. von Rhein, S.L. Schweizer, and R.B. Wehrspohn
16:30 HL 58.32 High quality opals from organic-inorganic material — •Jianhui Ye and Rudolf Zentel
16:30 HL 58.33 Photonic bandgap in two-dimensional octagonal quasi-periodic lattice — •Dmitry Chigrin and Johann Kroha
16:30 HL 58.34 Durchstimmbare Lasertätigkeit in ein- und zweidimensionalen photonischen Kristallen — •Stroisch Marc, Gerken Martina, Lemmer Uli, Forberich Karen und Gombert Andreas
16:30 HL 58.35 Ultraschnelles optisches Schalten in dreidimensionalen Photonischen Kristallen aus Silizium — •C. Becker, S. Linden, M. Wegener, N. Tetreault, V. Kitaev, G. von Freymann und G. A. Ozin
16:30 HL 58.36 Integration of three-dimensional photonic crystals onto structured silicon wafers — •Jianhui Ye, Rudolf Zentel, Sanna Arpiainen, and Jouni Ahopelto
16:30 HL 58.37 Larger bandgaps of photonic crystals fabricated by holographic lithography can be realized by the beam design — •Xiulun Yang and L.Z. Cai
16:30 HL 58.38 Negative refraction in 2d square lattice photonic crystals at millimetre waves — •Rados Gajic, Ronald Meisels, Friedemar Kuchar, Javad Zarbakhsh, and Kurt Hingerl
16:30 HL 58.39 Tuning of the defect mode in a three dimensional photonic crystal made of macroporous silicon and a liquid crystal — •Guido Mertens, Sven Matthias, Ralf Wehrspohn, and Heinz Kitzerow
16:30 HL 58.40 Photonic Crystal Waveguides Based On The Insulator-On-Silicon-On-Insulator Material System — •Cécile Jamois, Christian Hermann, Alexey Milenin, Torsten Geppert, Kosmas Tsakmakidis, Ralf Wehrspohn, and Ortwin Hess
16:30 HL 58.41 Purcell effect of colloidal semiconductor nanocrystals in microcavities — •Robert M. Kraus, Pavlos G. Lagoudakis, Dmitry Talapin, Andrey L. Rogach, John M. Lupton, Jochen Feldmann, and Horst Weller
16:30 HL 58.42 DLTS-Untersuchungen an III-V-Halbleitern für Solarzellen — •Severin Müller, Frank Dimroth, Sascha van Riesen und Andreas W. Bett
16:30 HL 58.43 Optimierung von Tunneldioden in III-V Mehrfach-Solarzellen — •Wolfgang Guter, Frank Dimroth, Matthias Meusel und Andreas Bett
16:30 HL 58.44 Local characterisation of multicrystalline silicon solar cells with the front metal grid on grain boundaries — •Viktor Schlosser, Rita Ebner, and Johann Summhammer
16:30 HL 58.45 Radiative recombination coefficient in crystalline silicon above room temperature — •Sebastian Meier, Rudolf Brüggemann, Saioa Tardon, and Gottfried Heinrich Bauer
16:30 HL 58.46 Transmissionselektronenmikroskopie und hochauflösende Röntgendiffraktometrie an GaInP/GaInAs/Ge Heterostrukturen für Tripel Solarzellen — •Jan Schöne, Erdmann Spiecker, Wolfgang Jäger, Frank Dimroth und Andreas W. Bett
16:30 HL 58.47 Local partial density of states in CuInS2 upper valence band determined by x-ray emission spectroscopy-evidence for In 5p contribution — •L. Zhang, I. Konovalov, D. Wett, M. Nagel, D. Schulze, R. Szargan, and T. Chassé
16:30 HL 58.48 Nichtinvasive Charakterisierung fabrikationsbedingter Defekte in Solarzellen — •D. Ragusch, J. Beyer, E. Cikos, D. Drung, S. Rolle und Th. Schurig
16:30 HL 58.49 InP-based III-V solar cells — •H.-J. Schimper, Z. Kollonitsch, K. Möller, U. Seidel, U. Bloeck, K. Schwarzburg, F. Willig, and T. Hannappel
16:30 HL 58.50 Growth and Characterization of 3C-SiC thin films on Si substrates — •Rakesh Sohal, Karsten Henkel, Klaus Müller, and Dieter Schmeißer
16:30 HL 58.51 Oxide-free transfer of silicon layers in UHV — •Alin Mihai Fecioru, Stephan Senz, and Ulrich Michael Gösele
16:30 HL 58.52 Preparation and Characterization of FeS films — •Ganhua Fu, Angelika Polity, Wilhelm Kriegseis, Dietmar Hasselkamp, Bruno K. Meyer, Boris Mogwitz, and Jürgen Janek
16:30 HL 58.53 Electrical properties of semiconducting PZT films on gold surfaces — •F. Müller, J. Yukecheva, A.-D. Müller, and M. Hietschold
16:30 HL 58.54 Focused ion beam implantation of magnetic ions — •Alexander Melnikov, Safak Gök, Sinan Ünlübayir, Rolf Wernhardt, Dirk Reuter, and Andreas Wieck
16:30 HL 58.55 Fabrication of closed single-walled semiconductor microtubes — •T. Kipp, S. Mendach, H. Welsch, Ch. Heyn, D. Heitmann, and W. Hansen
16:30 HL 58.56 Strukturelle und optische Eigenschaften von β-FeSi2-Filmen auf Si(100) und MgO(100) — •Kirill Trounov, Marco Walterfang, Werner Keune und Vasyl Kravets
16:30 HL 58.57 Electrical transport investigation of platinum salt nanowires — •J. M. Becker, L. Ren, M. Wark, and R. Haug
16:30 HL 58.58 Infrared behaviour and plasmon properties of single metal nanowires — •Torsten Kolb, Maria Eugenia Toimil Molares, Thomas Cornelius, Florian Kost, Robert Lovrincic, Reinhard Neumann, Annemarie Pucci, and Gerhard Fahsold
16:30 HL 58.59 Investigation of lateral Stark effect in InAs-quantum dots — •Victorina Stavarache, Dirk Reuter, Andreas D. Wieck, Matthias Schwab, Ruth Oulton, and Manfred Bayer
16:30 HL 58.60 Nanolithography on AlGaAs-GaAs heterostructures by Atomic Force Microscope — •Kevin Rachor, Steffen Groth, Christian Heyn, Detlef Heitmann, and Can-Ming Hu
16:30 HL 58.61 Ionenimplantation von N+ und Al+ in ZnO Nanodrähte — •Sven Müller, Daniel Stichtenoth, Daniel Schwen, Christine Borchers und Carsten Ronning
16:30 HL 58.62 Growth Direction of Epitaxially Grown Silicon Nanowires — •Volker Schmidt, Stephan Senz, and Ulrich Gösele
16:30 HL 58.63 GaN Nanowhiskers: Epitaxial Growth — •Thomas Richter, Ralph Meijers, Raffaella Calarco, Toma Stoica, and Hans Lüth
16:30 HL 58.64 Size Reduction of Silicon / Silicon Dioxide Nanowires — •Florian M. Kolb, Herbert Hofmeister, Margit Zacharias, and Ulrich Gösele
16:30 HL 58.65 Gas-source C Predeposition and Ge Dot Formation on Si(001): Effects of Anneal Temperature for Hydrogen Desorption — •Takeshi Murata, Yuzuru Narita, and Maki Suemitsu
16:30 HL 58.66 Formation of Ge dots on Si(111)-7x7 surface and effects of C predeposition using monomethylsilane — •Yuzuru Narita, Masashi Sakai, Takeshi Murata, and Maki Suemitsu
16:30 HL 58.67 Low-ohmic contacts to two-dimensional electron gases in GaAs/AlGaAs heterostructures — •S. Raiser, U. Graumann, M. Fleischer, J. Schmid, S. Jauerneck, J. Weis, and D.A. Wharam
16:30 HL 58.68 Growth of highly homogeneous InGaAs islands on GaAs using a stressor layer technique — •H. J. Krenner, D. Heiss, D. Schuh, M. Bichler, G. Abstreiter, and J. J. Finley
16:30 HL 58.69 CoSi2 nanowires synthesized by FIB — •L. Bischoff, B. Schmidt, and C. Akhmadaliev
16:30 HL 58.70 Elektrische Charakterisierung einzelner Silizium und Silizium/Germanium Heterostruktur- Nanodrähte — •Frank Fleischer, Jan Bauer, Luise Schubert, Peter Werner und Margit Zacharias
16:30 HL 58.71 Atomistic Computer Simulations on Ion Beam Synthesis and Decay of CoSi2 Nanowires — •Lars Röntzsch and Karl-Heinz Heinig
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