Berlin 2005 – scientific programme
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HL: Halbleiterphysik
HL 58: Poster IIb
HL 58.24: Poster
Tuesday, March 8, 2005, 16:30–19:00, Poster TU F
II-VI/III-V semiconductor optical cavities fabricated by chemical etching, selective growth or FIB — •J. Lupaca-Schomber1, B. Daniel1, M. Hetterich1, D. Tröndle1, H. Kalt1, F. Perez-Willard2, J. Hawecker2, and D. Gerthsen2 — 1Institut für Angewandte Physik and Center for Functional Nanostructures (CFN), Universität Karlsruhe, D-76131 Karlsruhe, Germany — 2Laboratorium für Elektronenmikroskopie and CFN, Universität Karlsruhe, D-76128 Karlsruhe, Germany
We present three different methods for the production of (sub-) micrometer optical cavities with pyramidal shape made of II-VI/III-V semiconductors. One method is the selective etching (H3PO4:H2O2:H2O solution) of an AlAs/GaAs structure. The AlAs sacrificial layer controls the lateral etching rate and influences the cross-sectional profile of the GaAs pyramidal objects. Another possibility is the selective growth of self-organized CdSe/ZnSe structures on pre-patterned GaAs (001) surfaces. Growth was performed by molecular beam epitaxy (MBE). A more direct method is Focussed Ion Beam (FIB). Structures in CdSe/ZnSe multiple quantum wells were prepared by this technique using a Ga ion beam without the necessity of further process steps. All samples were examined for their optical quality using µ-PL.