Berlin 2005 – wissenschaftliches Programm
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HL: Halbleiterphysik
HL 58: Poster IIb
HL 58.45: Poster
Dienstag, 8. März 2005, 16:30–19:00, Poster TU F
Radiative recombination coefficient in crystalline silicon above room temperature — •Sebastian Meier, Rudolf Brüggemann, Saioa Tardon, and Gottfried Heinrich Bauer — Institute of Physics, Carl von Ossietzky University Oldenburg, Germany
Typical operating temperatures of solar cells are in the temperature range above room temperature. In these devices radiative recombination is one of the recombination channels that determine the excess carrier density and luminescence efficicency. We concentrate on radiative recombination in crystalline silicon for which some discrepancy exists in the literature on the values for the rate coefficient B(T) of radiative recombination. Trupke et al. [1] reviewed this discrepancy and determined B(T) in the temperature range between 77 K and 300 K from relative photoluminescence measurements that were calibrated with literature data of the absorption coefficient. In order to extend the temperature range reported in the literature, we determined B(T) for crystalline silicon between room temperature and 393 K from absolute photoluminescence measurements on crystalline silicon wafers passivated with thin amorphous silicon films. For temperatures below room temperature good agreement is found between data from [1] and the present values. Above room temperature B(T) is almost independent of temperature with a value around 3.9 × 10−15 cm3 s−1.
[1] T. Trupke et al., J. appl. Phys. 94 4930 (2003).